2W High Linearity InGaP HBT Amplifier AH322-S8G High Dynamic Range Driver Amplifier

Product Features

• 400 – 2700 MHz

• +33 dBm P1dB

• +50 dBm Output IP3

• 13.4 dB Gain @ 2140 MHz

• 500 mA Quiescent Current

• +5 V Single Supply

• MTTF > 100 Years

• Lead-free/RoHS-compliant SOIC-8 Package

Applications

• Final stage amplifiers for Repeaters

• High Power Amplifiers

• Mobile Infrastructure

• LTE / WCDMA / EDGE / CDMA

Product Description

The AH322 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowbandtuned application circuits with up to +50 OIP3 and +33 dBm of compressed 1dB power. It is housed in a leadfree/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested.

The AH322 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. The AH322 is ideal for the final stage of small repeaters or as driver stages for high power amplifiers. In addition, the amplifier can be used for a wide variety of other applications within the 400 to 2700 MHz frequency band.

Typical Device Data

Notes:

The gain for the unmatched device in 50 ohm system is shown as the trace in pink color, [DB (S (2, 1)]. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the blue line [DB (GMAX)]. The impedance plots are shown from 0.01 – 4 GHz, with markers placed in 0.5 GHz increments.

bridge rectifier circuit

signal schottky diode

2W High Linearity InGaP HBT Amplifier AH322-S8G High Dynamic Range Driver Amplifier Images