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NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972

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NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972

Brand Name : Anterwell

Model Number : 2SC1972

Certification : new & original

Place of Origin : original factory

MOQ : 20

Price : Negotiation

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 8000

Delivery Time : 1 day

Packaging Details : Please contact me for details

High Power Gain : Gpe>=7.5dB @Vcc=13.5V, Po=14W, f=175MHz

Package : TO-220

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NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972

DESCRIPTION:

The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications.

FEATURES INCLUDE:

• Replaces Original 2SC1972 in Most Applications

• High Gain Reduces Drive Requirements

• Economical TO-220 Package

MAXIMUM RATINGS

IC 3.5 A
VCBO 35 V
PDISS 25 W @ TC = 25 °C
TSTG -55 °C to +175 °C
θJC 6.0 °C/W

NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972

CHARACTERISTICS TC = 25 °C

SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
BVCEO IC = 50 mA 17 V
BVCBO IC = 10 mA 35 V
BVEBO IC = 10 mA 4.0 V
ICBO VCES = 25 V 100 µA
IEBO VEB = 3.0 V 500 µA
hFE VCE = 10 V IC = 100 mA 10 50 180 ---

ηC

POUT

VCC = 13.5 V PIN = 2.5 W f =175 MHz

60

14

70

15

%

W


Product Tags:

multi emitter transistor

      

silicon power transistors

      
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